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If the high frequency capacitance is 3F/cm2 in accumulation, calculate the dielectric thickness and the minimum high frequency capacitance. Assume the permittivity of gate oxide
If the high frequency capacitance is 3F/cm2 in accumulation, calculate the dielectric thickness and the minimum high frequency capacitance. Assume the permittivity of gate oxide is r = 3.9 and the permittivity of Si is r = 11.8. The substrate is a p-type Si with doping of 1016 cm-3
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