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In a non-pyrogenic LOCOS process at 1100C, what is the minimum nitride thickness required to mask against 1m of oxide growth? (Assume >50nm of nitride

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In a non-pyrogenic LOCOS process at 1100C, what is the minimum nitride thickness required to mask against 1m of oxide growth? (Assume >50nm of nitride must always be present to prevent local oxidation. Note that the density of nitride is 3.44g/cm3 while that of oxide is about 2.2g/cm3.)

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