In a p-n diode with inhomogeneous doping NA(x) and ND(x) on the two sides, with both being non-degenerate, and both regions extent being in the long base limit, what is the carrier concentra- tion at an an applied bias of V across the device appearing at the transition region edge in low level injection? Let x -- sent the coordinate for the p-side quasineutral edge of the junction and x = x" the same for n-side. X--Xp repre- 10 pts In a p-n diode with inhomogeneous doping NA(x) and ND(x) on the two sides, with both being non-degenerate, and both regions extent being in the long base limit, what is the carrier concentra- tion at an an applied bias of V across the device appearing at the transition region edge in low level injection? Let x -- sent the coordinate for the p-side quasineutral edge of the junction and x = x" the same for n-side. X--Xp repre- 10 pts