Calculate the maximum temperature allowed for the silicon if the intrinsic carrier concentration is 11012 electrons/m?. 382 K 360 K O 364 K O 300 K 4 points Calculate the space width in (meter) and the capacitance in (Farad) for a p-n junction when a reverse bias with 3V is applied at T=350K. Assume that NA=1x1020/m2, Np-1x1018, n = 1x1015/m2, &,= 11.7, and the cross section area is lum. 6.8e-6, 23-19 6.8e-6, 2.3-19 68e-6, 23-19 68e-6, 2.3-19