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It is desired to deposit a conformal SiO2 layer on a trench structure as part of an IC fabrication process. The trench is 1 m

It is desired to deposit a conformal SiO2 layer on a trench structure as part of an IC fabrication process. The trench is 1 m wide and 10 m deep. Two deposition systems are available, one with n = 1 and Sc = 0.8, and another system with n = 0.5 and Sc = 0.01. Which one would you use? Explain why

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