L CLO1: Explain the basic properties of semiconductor materials Q1 - Consider silicon at T = 300 K. Assume the hole concentration is given by p= 1016-1Lp (em-), where Le-10-3cm. Calculate the hole diffusion current density at (a) x = 0 and (b) x = 10-cm. Assume De = 10 cm-/s and q = 1.6 x 10-19 (3 marks, 5 mins)