Last time someone posted a completely unrelated answer. please don't do it again.

1) Suppose we are attempting to nucleate a solid-phase reaction between a metal and a silicon substrate to produce a silicide intermetallic compound and carry the reaction to completion. Further suppose that we have a dopant in the solid which we do not wish to have diffusing as the silicide reaction takes place. Suppose the two processes both have rates defined by Equation 4.15. Given the kinetic parameters for the reactions as follows: ko prefactor Activation Energy, E Silicide reaction: 1x102 cm? s? 3.5 eV Dopant diffusion: 4.3x103 cms? 2.3 eV The maximum temperature at which the silicide reaction can take place is 850C and the minimum temperature is 450C. If the product of rate and time for the desired process must be 2x10-7cm, calculate: a) the time necessary for the silicide formation process at 450C b) the dopant diffusion depth for the silicide formation time at 450C c) the time necessary for the formation process process at 850C d) the dopant diffusion depth for the silicide formation time at 850C