Layout the fin masks (Mandrel and cut mask) used to fabricate Intels 14nm 6transistor SRAM. (hint need to find intel 14nm SRAM layout on web).

OR

Layout the fin mask (Mandrel and cut mask) used to fabricate Intels 22nm 6-transistor 3 SRAM cells. Only required to do the layout of the fin masks for intels 14 or 22nm SRAM but not both.

Assume mask and printed feature are of ratio 1:1. Draw and label feature sizes (Mandrel dimension, space, and spacer thickness) to scale.