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Light of wavelength 600 nm and power of 1 mw is incident on a semiconductor photodiode with an absorbing layer of thickness of (ln
Light of wavelength 600 nm and power of 1 mw is incident on a semiconductor photodiode with an absorbing layer of thickness of (ln 4 muonm) I) If the absorption coefficent at this wavelength is 10^-4 cm^-1 and if 1% power is lost on reflection at the surface, the power absorbed will be:
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Optics
Authors: Eugene Hecht
5th edition
133977226, 133979121, 978-0133977226
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