Matlab coding

The resistivity p of doped silicon is based on the charge q on an electron, the electron density n, and the electron mobility u. The electron density is given in terms of the doping density N and the intrinsic carrier density ni. The electron mobility is described by the temperature T, the reference temperature To, and the reference mobility po. The equations required to compute the resistivity are, 1 p= qnu where -2.42 n = and (N N + N2 +4n? = Determine N, given To= 300 K, T = 1000 K, uo = 1360 cm (V s), q=1.7* 10-19 C, ni=6.21 * 109 cm, and a desired p = 6.5 x 106 V s cm/C