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Microelectronic devices are made by depositing many layers of thin films onto silicon wafers. For example, thin films of arsenic for silicon are deposited by
Microelectronic devices are made by depositing many layers of thin films onto silicon wafers. For example, thin films of arsenic for silicon are deposited by chemical vapour deposition CVD of arsine AsH vapour onto the surface of a silicon wafer. The chemical reaction for this CVD process is
AsHg Ass Hg
The process operates at a pressure of Pa and a temperature of oC In many CVD reactors, the gas phase over the thin film is not mixed. Furthermore, at oC the surface reaction is very fast. Consequently, the molecular diffusion of AsH vapour to the surface of the wafer can be assumed to control the rate of Ass formation.
A mixture of arsine and hydrogen gas continuously flows into the reactor at a molar ratio of : H:AsH A diffuser cm above the wafer provides a quiescent gas space over the growing Ass film.
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