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MOSFET amplifiers don't typically have large voltage gains due to the relatively small gm of MOSFETs compared to BJTs. However in certain cases high
MOSFET amplifiers don't typically have large voltage gains due to the relatively small gm of MOSFETs compared to BJTs. However in certain cases high gain can be achieved. In this problem you will design the MOSFET amplifier to have a large voltage gain of 1000 in order to amplify a tiny 1 mV input signal. Suppose you have carefully measured the MOSFET to have V = 1.8 and k = 120 mA/V. Use a 12V supply for VDD and set the DC value of V = 2 V. The input resistance must be a minimum of 100ks in order to prevent loading down the input signal. Vi 00 VDD VDD RG1 b. Set the gain equal to 1000 in your formula (part a) and replace gm with the formula for transconductance in the saturation mode. RG2 a. Start by writing the formula for the magnitude of voltage gain of this amplifier in terms of the transconductance and drain resistance. c. Replace Rp in your formula with an expression using Ohm's law and lp. Recall that V = 2. d. Solve your formula for VGs (note: you may need to use the formula for saturation ID). e. Calculate the DC value of the drain current and the value of Rp. f. Determine the value of RG and RG2. (Hint: RG and RG2 determines VGs and also Rin = 100 kn). RD Vo
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