From the data of Fig. 3.11, calculate the bandedge emission spectrum for GaAs at 300K. Absorption coefficient (cm) 10% 105 10% 103 10 10 0.2 3 GaP 2 Photon energy (eV) 1 1.5 Ge Amorphous Si 0.6 GaAs Ga 0.3 In 0.7AS0.64 0.36 InGaAs InP Si 0.7 1.0 Wavelength (um) LN 1.4 1.8 Figure 3.11 Near-bandgap absorption spectra of different semiconductors (from M. Shur, Physics of Semiconductor Devices, 1990. Reprinted by permission of Prentice Hall, Englewood Cliffs, New Jersey).