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please answer The concentration of donor impurity atoms in doped silicon is Va -10 cm J. Assume an electron mobility of jim - 1300 .

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The concentration of donor impurity atoms in doped silicon is Va -10" cm J. Assume an electron mobility of jim - 1300 . and a hole mobility of Ap - 450 . What is the resistivity of the material? 48 0 cm 530 LLD 48000 cm 127 KO

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