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3) A p-type oriented silicon wafer (1015 cm) is placed in a wet oxidation system to grow a field oxide of 600 at 1000 C. i) Determine the time required to grow the field oxide. ii) After this first oxidation, the oxide over region A is removed. Then a diffusion step is carried out in which phosphorus is diffused into the wafer and the surface concentration of phosphorus is 3x100 cm ?. Next, a dry oxidation step is performed at 900 C for 60 minutes. Find the thickness of the oxide over region A and the new thickness of the oxide over the other area (B in the figure below). Ignore any chemical or structural differences in the field oxide and gate oxide in terms of the oxidation kinetics. Explain why wet oxidation is used for the field oxide and dry oxidation is used for the gate oxide. Explain the difference between mass-transport limited oxidation and reaction-rate limited oxidation. Under what oxide growth conditions would each of these be expected? Dryordation 11111 10 QOL 01 Odtion time I Wet Oxidation 1 71*C) 900 800 1100 1000 700 TC) 1100 1000 900 800 10 700 H04760 ton) H704760 tor) E-0.71 eV 10-1 EAV - 1.96 V 10-1 Rate constant B/Aum/h) Hate constant Bum/h) 10-2 O, 1760 tom O, (760 ton) 10-9 - 1.24V B - 2.0V 10-1 10-1 10-5 0.7 0.8 1 0.9 1.0 11 0.7 08 09 1.0 1.1 1000/T(K) 1000/TIK) SiO2 SiO2 B A (111) Si 10-2 900 C (111) Si Dry oxidation 10-3 B/A (um/min) 10-4 B (um/min) 10-5 1017 1018 UU 1018 Cg (cm) 1020 1021