Answered step by step
Verified Expert Solution
Link Copied!

Question

1 Approved Answer

Problem 1.5 For polysilicon deposition by CVD at 1,000C with a concentration of Si atoms in the gas stream being 4 x 1016/cm?, calculate the

image text in transcribed

Problem 1.5 For polysilicon deposition by CVD at 1,000C with a concentration of Si atoms in the gas stream being 4 x 1016/cm?, calculate the percentage change in growth rate if the deposition temperature changes by 1%, when the polysilicon is deposited at a surface-reaction-limited growth of 1.5 um/min. Assume that the surface-reaction rate coefficient k, is given by ks = 10'exp(-Eg/kT) cm/sec

Step by Step Solution

There are 3 Steps involved in it

Step: 1

blur-text-image

Get Instant Access to Expert-Tailored Solutions

See step-by-step solutions with expert insights and AI powered tools for academic success

Step: 2

blur-text-image

Step: 3

blur-text-image

Ace Your Homework with AI

Get the answers you need in no time with our AI-driven, step-by-step assistance

Get Started

Recommended Textbook for

Bioprocess Engineering Basic Concepts

Authors: Michael Shuler, Fikret Kargi, Matthew DeLisa

3rd Edition

0137062702, 978-0137062706

More Books

Students also viewed these Chemical Engineering questions