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Problem 2 Boron predisposition will be performed for p-type well in a CMOS process. The pick of the implanted distribution has to be at the

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Problem 2 Boron predisposition will be performed for p-type well in a CMOS process. The pick of the implanted distribution has to be at the SiO2-Si interface. A final depth of the well needs to be 5 um with a final sheet resistance of 125 ohms per square. (a) What is a dose required for this predisposition step?; (b) How much time is needed to complete the drive-in for this well at 1050 2

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