Problem 4: For intrinsic semiconductors, the intrinsic carrier concentration n depends on temperature as follows: * exp (18.35a) or taking natural logarithms, Inne E. 267 (18.35b) Thus, a plot of In n versus 1/T (K) should be linear and yield a slope of -E/2k ("little k'is Boltzmann's constant). Using this information and the data presented in the figure determine the band gap energies for silicon and germanium, and compare these values with those given in the table. M www. Alr AL