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Q1) A silicon sample is oxidized in dry O2 at 1000C for 1 hour. (a) What is the thickness of the oxide grown? (b) How

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Q1) A silicon sample is oxidized in dry O2 at 1000C for 1 hour. (a) What is the thickness of the oxide grown? (b) How much additional time is required to grow 0.1m more oxide in wet O2 at 1000C

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