Q1. A silicon sample is oxidized in dry O2 at 1000 C for 1 hour.

a) What is the thickness of the oxide grown?

b) How much additional time is required to grow 0.1 more oxide in wet O2 at 1000C

Q2. A p-type oriented silicon wafer with a resistivity of 10 ohm-cm is placed in a wet oxidation system to grow a field oxide 0.5 at 1050C.

Determine the time required to grow the oxide.