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a CB transistor using a single de source. The circuit of Fig. 3-29 illustrates a method for biasing transistor is a Si device (V
a CB transistor using a single de source. The circuit of Fig. 3-29 illustrates a method for biasing transistor is a Si device (V BEQ = 0.7 V), B = 99, and IBQ = 30 A. Find (a) R2, and (b) VCEQ- Ans. (a) 3.36 k2; The %3D (b) 6.06 V ic Rg =1 k2 Rc=2 k2 ig R2 R = 10 k2 Vcc=15 V Fig. 3-29
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Fundamentals Of Electric Circuits
Authors: Matthew Sadiku, Charles Alexander
3rd Edition
978-0073301150, 0073301159
