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Let The MOSFET of Fig. 4-18 is characterized by Vr 4V and Ipon)= 10 mA. iG 0, R = 0.4 MS2, R2 = 5k2,
Let The MOSFET of Fig. 4-18 is characterized by Vr 4V and Ipon)= 10 mA. iG 0, R = 0.4 MS2, R2 = 5k2, Rs 0, Rp 2k2, and VDp 20 V. (a) Find the exact change in Ipo when the MOSFET is replaced with a new device characterized by Vr 3.8 V and Ipon) =9 mA. (b) Find the change in Ipo predicted by sensitivity analysis when the original device is replaced as in part a. VDD Rp R2 R1 Rs
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An Introduction to Analysis
Authors: William R. Wade
4th edition
132296381, 978-0132296380
