SiH2(g) + O2(g) SiO2(s) + 2H2(g) The general growth rate behavior as it relates to substrate temperature and reactant flow ratio is as follows: deposition rate deposition rate 200 600 400 T(C) 0.1 1 10 O2 SIH4 Please provide an explanation for the observed growth rate behavior. specifically, a) why does growth rate rise with increasing temperature at low temperatures and b) 02:SiH4 ratios at small ratios; and c) why does growth rate decrease as temperature continues to increase; and d) as O2 SiH4 ratio continues to increase