Question
Silicon is exposed to a gas that established a concentration of 10^18 atoms of Al per Cm3 on the surface of the Silicon. The process
Silicon is exposed to a gas that established a concentration of 10^18 atoms of Al per Cm3 on the surface of the Silicon. The process is carried out at 1473 K and the diffusivity of Al in Si is 10-15 m2/s a this temperature.
Calculate the total amount of Si (in atoms of Al per Cm2) that has diffused into Si after 30 mins of treatment at 1463K.
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The Lattice Boltzmann Method Principles And Practice
Authors: Timm Krüger, Halim Kusumaatmaja, Alexandr Kuzmin, Orest Shardt, Goncalo Silva, Erlend Magnus Viggen
1st Edition
3319831038, 978-3319831039
