The CVD process (chemical vapor deposition) is a process used in the microelectric industry to deposit thin films of constant thickness on silicon wafers. Si3N4 the most commonly used compound for this purpose, is obtained by the following reaction. the reaction given above is the elementary reaction and k=250dm^6/mol^2s P0= 8.2atm Tm=227C isothermal and no pressure drop (R=0.082 atmdm^3/mol.K) The feed stream contains 45% SiH4 and 55% ammonia

a) construct the stoichiometric table and write down the concentrations of each substance

b) write down the concentrations (CA, CB, CC, CD) with a conversion value of X=0.75.

c) find the reaction rates (rA, rB, rC, rD) at the conversion value of X=0.75.

2. (30p) The CVD process (chemical vapor deposition) is a process used in the microelectric industry to deposit thin films of constant thickness on silicon wafers. Si3N4 the most commonly used compound for this purpose, is obtained by the following reaction. 3SiH4+4NH3Si3N4+12H2 he reaction given above is the elementary reaction and k=250dm6/mol2.s, P0=8.2atm,T0=227C, othermal and no pressure drop (R=0.082 atm.dm / mol.K). The feed stream contains 45%SiH4 and 55% nmonia. A) Construct the stoichiometric table and write down the concentrations of each substance. B) Write down the concentrations (CA,CB,CC,CD) with a conversion value of X=0.75. C) Find the reaction rates (rA,,rB,rC,rD) at the conversion value of X=0.75