Question
The energy band diagram for HIT solar cell is shown above. (i) (ii) Assume photogenerated current is 40mA/cm. And the carrier velocity for holes
The energy band diagram for HIT solar cell is shown above. (i) (ii) Assume photogenerated current is 40mA/cm. And the carrier velocity for holes at the a-Si/c- Si interface on the left is 10 cm/s. What is the concentration of holes at this interface? Assume AEC at a-Si/c-Si interface on the left is 0.2eV. Quantify the effect of this discontinuity on the surface recombination velocity for electrons at this interface. metal P AE , a-Si:H E E E AE n-type c-Si , a-Si:H metal
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