The incorporation of oxygen in an evaporated film was used to determine the base pressure of the growth chamber. As it turns out, this is one way to prepare oxide films. For this problem, you are creating multi-layers of Si and stoichiometric SiO2 from a Si reservoir and ambient oxygen.

a. You are to design a set of process steps. Please describe the base pressure of the chamber, the temperature of the Si reservoir, and the Si deposition rate in each step.

b. Are there any limits that will impact your overall process? What will limit the number of layers that can be formed?