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The objective of the project is to design a high-throughput, high-yield procedure for manufacturing nanoscale complementary field-effect transistors (CFETs), featuring stacked PFET and NFET components

The objective of the project is to design a high-throughput, high-yield procedure for manufacturing nanoscale complementary field-effect transistors (CFETs), featuring stacked PFET and NFET components embedded within a SiO2 dielectric layer

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