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The reverse-biased current of a particular p-n junction diode increases when it is exposed to light of wavelength less than or equal to 600

The reverse-biased current of a particular p-n junction diode increases when it is exposed to light of wavelength less than or equal to 600 nm. Assume that the increase in carrier concentration takes place due to the creation of new hole-electron pairs by the light. Find the band gap.

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