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This question is related to embedded systems Consider an NMOS transistor in 180nm process with W/L =0.36/0.18m. In this process, the gate oxide thickness is
This question is related to embedded systems Consider an NMOS transistor in 180nm process with W/L =0.36/0.18m. In this process, the gate oxide thickness is 40A. The high-field mobility of electrons, n is assumed to be 180cm2/V at 70C, threshold voltage, Vtn=0.4V and ox=3.98.851014F/cm. Plot Idsvs. Vds for Vgs=0,1.2 and 1.8V
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