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This Question is related to EMBEDDED SYSTEMS please give correct answer!!!!! Consider an NMOS transistor in 65nm process with W/L=205/130nm. In this process, the gate

This Question is related to EMBEDDED SYSTEMS
please give correct answer!!!!!
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Consider an NMOS transistor in 65nm process with W/L=205/130nm. In this process, the gate oxide thickness is 10.5108cm. The high-field mobility of electrons, n is assumed to be 80cm2/V, threshold voltage, Vtn=0.3V and ox=3.98.851014F/cm. Plot Idsvs. Vds for Vgs=0.7V. Show the saturation values of Idsat and Vdsat

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