Use Minitab to answer the following questions 3. An experiment was run to investigate the influence of DC bias voltage on the amount silicon dioxide etched from a wafer in a plasma etch process. Three different levels of DC bias were being studied and four replicates were run in random order, resulting the data in Table below. DC Bias levels Amount Etched (in Angstroms) 1 2 3 4 S398 283.5 236 231.5 228 485 571 329 474 330 336 384.5 477.5 470 474.5 a) State the dependent variable/response, independent variable/factor, and levels of the factor b) State the null and alternative hypotheses c) Conduct a one-way ANOVA on the data, and find if there exists a considerable difference in mean of the oxide thickness etched at the different DC bias voltages. d) [Extra credit] If there is a difference, which DC Bias levels are different from the others?