Wires A and B, having equal lengths of 40.9 m and equal diameters of 2.68 mm, are connected in series. A potential difference of 60.7 V is applied between the ends of the composite wire. The resistances are R_A = 0.123 ? and R_B = 0.702 ?. For wire A, what are (a) magnitude J of the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B, what are (d) J and (e) V? (f) Of what type material is B made?

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Wires A and B, having equal lengths of 40.9 m and equal diameters of 2.68 mm, are connected in series. A potential difference of 60.7 V is applied between the ends of the composite wire. The resistances are RA = 0.123 0 and RB = 0.702 0. For wire A, what are (a) magnitude J of the current density and (b) potential difference V? (c) Of what type material is wire A made (see the table below)? For wire B, what are (d) J and (e) V? (f) Of what type material is B made? Resistivities of Some Materials at Room Temperature (20 C) Resistivity, p Temperature Coefficient Material (2 . m) of Resistivity, a (K-1) Typical Metals Silver 1.62 X 10-8 4.1 X 10-3 Copper 1.69 X 10-8 4.3 X 10-3 Gold 2.35 X 10-8 4.0 X 10-3 Aluminum 2.75 X 10-8 4.4 X 10-3 Manganin" 4.82 X 10-8 0.002 X 10-3 Tungsten 5.25 X 10-8 4.5 X 10-3 Iron 9.68 X 10-8 6.5 x 10-3 Platinum 10.6 X 10-8 3.9 x 10-3 Typical Semiconductors Silicon, pure 2.5 X 103 -70 X 10-3 Silicon, n-type 8.7 X 10-4 Silicon, p-type 2.8 X 10-3 Typical Insulators Glass 1010 - 1014 Fused quartz ~1016 "An alloy specifically designed to have a small value of a. "Pure silicon doped with phosphorus impurities to a charge carrier density of 1023 m-3. "Pure silicon doped with aluminum impurities to a charge carrier density of 1023 m-3