Question
You deposit a Ti film on an Al 2 O 3 substrate. Assume the Ti film is > 1000 angstroms average thickness, which is much
You deposit a Ti film on an Al2O3 substrate. Assume the Ti film is > 1000 angstroms average thickness, which is much greater than the imfp of substrate Al2p or O1s electrons. The Ti 2p3/2 feature exhibits an XPS binding energy of ~ 454 eV. (The Ti/Al2O3 interface is not at issue here.) You also observed a small amount of adventitious C with a binding energy of ~ 284.8 eV. You then attempt to form a titanium carbide film by exposing the Ti sample to a CH4 plasma. Describe general changes to the Ti 2p3/2 and C 1s binding energies for (a) Ti carbide formation and (b) formation of a hydrocarbon film on top of the Ti film, without carbide formation. Justify your answers. Note: The Ti and C Pauling Electronegativities are 2.23 and 3.15, respectively.
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