A high-frequency bipolar transistor is biased at (I_{C Q}=0.4 mathrm{~mA}) and has parameters (C_{mu}=0.075 mathrm{pF}, f_{T}=2 mathrm{GHz}),

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A high-frequency bipolar transistor is biased at \(I_{C Q}=0.4 \mathrm{~mA}\) and has parameters \(C_{\mu}=0.075 \mathrm{pF}, f_{T}=2 \mathrm{GHz}\), and \(\beta_{o}=120\).

(a) Determine \(C_{\pi}\) and \(f_{\beta}\).

(b) Determine \(\left|h_{f e}\right|\) at (i) \(f=10 \mathrm{MHz}\), (ii) \(f=20 \mathrm{MHz}\), and (iii) \(f=50 \mathrm{MHz}\).

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