An n-type silicon material has a resistivity of (ho=0.65 Omega-mathrm{cm}). (a) If the electron mobility is (mu_{n}=1250
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An n-type silicon material has a resistivity of \(ho=0.65 \Omega-\mathrm{cm}\).
(a) If the electron mobility is \(\mu_{n}=1250 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}\), what is the concentration of donor atoms?
(b) Determine the required electric field to establish a drift current density of \(J=160 \mathrm{~A} / \mathrm{cm}^{2}\).
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Related Book For
Microelectronics Circuit Analysis And Design
ISBN: 9780071289474
4th Edition
Authors: Donald A. Neamen
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