Consider the BiCMOS follower circuit shown in Figure P8.20. The BJT transistor parameters are (V_{B E}(mathrm{on})=0.7 mathrm{~V},
Question:
Consider the BiCMOS follower circuit shown in Figure P8.20. The BJT transistor parameters are \(V_{B E}(\mathrm{on})=0.7 \mathrm{~V}, V_{C E}(\mathrm{sat})=0.2 \mathrm{~V}, V_{A}=\infty\), and the MOSFET parameters are \(V_{T N}=-1.8 \mathrm{~V}, K_{n}=12 \mathrm{~mA} / \mathrm{V}^{2}, \lambda=0\). Determine the maximum and minimum values of output voltage and the corresponding input voltages for the circuit to operate in the linear region for (a) \(R_{L}=\infty\) and (b) \(R_{L}=500 \Omega\). (c) What is the smallest value of \(R_{L}\) possible if a \(2 \mathrm{~V}\) peak sine wave is produced at the output? What is the corresponding conversion efficiency?
Fantastic news! We've Found the answer you've been seeking!
Step by Step Answer:
Related Book For
Microelectronics Circuit Analysis And Design
ISBN: 9780071289474
4th Edition
Authors: Donald A. Neamen
Question Posted: