Reconsider the diff-amp specifications listed in Problem 11.45. Design an all-CMOS diff-amp with the configuration in Figure 11.32 to meet the specifications. The NMOS transistor parameters are \(V_{T N}=0.4 \mathrm{~V}\), \(k_{n}^{\prime}=100 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda_{n}=0.025 \mathrm{~V}^{-1}\). The parameters of the PMOS transistors are \(V_{T P}=-0.4 \mathrm{~V}, k_{p}^{\prime}=40 \mu \mathrm{A} / \mathrm{V}^{2}\), and \(\lambda_{p}=0.04 \mathrm{~V}^{-1}\).

Data From Problem 11.45:-

The Hall effect experimental arrangement was described in Example 11.4. The required diff-amp is to be designed in the circuit configuration in Figure P11.35. The transistor parameters are \(V_{T N}=0.8 \mathrm{~V}, k_{n}^{\prime}=80 \mu \mathrm{A} / \mathrm{V}^{2}\), \(\lambda_{1}=\lambda_{2}=0\), and \(\lambda_{3}=\lambda_{4}=0.01 \mathrm{~V}^{-1}\). If the CMRR requirement cannot be met, a more sophisticated current source may have to be designed.

Data From Example 11.4:-

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Design a differential amplifier to meet the specifications of an experi- mental system.