The electron and hole concentrations in a sample of silicon are shown in Figure P1.16. Assume the electron and hole mobilities are the same as in Problem 1.12. Determine the total diffusion current density versus distance \(x\) for \(0 \leq x \leq 0.001\mathrm{~cm}\).

Data From Problem 1.12:-

A drift current density of \(120 \mathrm{~A} / \mathrm{cm}^{2}\) is established in n-type silicon with an applied electric field of \(18 \mathrm{~V} / \mathrm{cm}\). If the electron and hole mobilities are \(\mu_{n}=1250 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}\) and \(\mu_{p}=450 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}\), respectively, determine the required doping concentration.

Transcribed Image Text:

106 Carrier concentration (cm) 1012 x=0 Figure P1.16 Electron concentration - Hole 1016 concentration 1012 x= 0.001cm