The quiescent collector current in a BJT is \(I_{C Q}=3 \mathrm{~A}\). The maximum allowed junction temperature is \(T_{j, \max }=150^{\circ} \mathrm{C}\) and the ambient temperature is \(T_{\mathrm{amb}}=25^{\circ} \mathrm{C}\). Other parameters are \(\theta_{\text {snk-amb }}=3.8^{\circ} \mathrm{C} / \mathrm{W}, \theta_{\text {case-snk }}=\) \(1.5^{\circ} \mathrm{C} / \mathrm{W}\), and \(\theta_{\operatorname{dev}-\text { case }}=4{ }^{\circ} \mathrm{C} / \mathrm{W}\).

(a) Determine the power that can be safely dissipated in the transistor.

(b) Using the results of part (a), determine the maximum collector-emitter voltage that may be applied.