The transistor characteristics \(i_{D}\) versus \(v_{D S}\) for an NMOS device are shown in Figure P3.3.

(a) Is this an enhancement-mode or depletion-mode device?

(b) Determine the values for \(K_{n}\) and \(V_{T N}\).

(c) Determine \(i_{D}\) (sat) for \(v_{G S}=3.5 \mathrm{~V}\) and \(v_{G S}=4.5 \mathrm{~V}\).

Transcribed Image Text:

Ip (mA) A 0.8 VGS-5 V 0.6 0.4 0.2 0 1 2 3 Figure P3.3 VDS (V) VGS=4V VGS=3 V VGS-2V 5 6