Transistors are made by doping single crystal silicon with different types of impurities to generate n- and
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Transistors are made by doping single crystal silicon with different types of impurities to generate n- and p-type regions. Phosphorus and boron are typical n- and p-type dopant species, respectively. Assuming that a thermal treatment at 1100°C for 1 h is used to cause diffusion of the dopants, calculate the constant surface concentration of P and B needed to achieve a concentration of 1018 atoms/cm3 at a depth of 0.1 mm from the surface for both n- and p-type regions. The diffusion coefficients of P and B in single crystal silicon at 1100°C are 6.5 x 10-13 cm2/s and 6.1 x 10-13 cm2/s, respectively.
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Related Book For
The Science And Engineering Of Materials
ISBN: 9781305076761
7th Edition
Authors: Donald R. Askeland, Wendelin J. Wright
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