The equipment for heating a wafer during a semiconductor manufacturing process is shown schematically. The wafer is heated by an ion beam source (not shown) to a uniform, steady-state temperature. The large chamber contains the process gas, and its walls are at a uniform temperature of Tch = 400 K. A 5 x 5 mm target area on the wafer is viewed by a radiometer, whose objective lens has a diameter of 25 mm and is located 500 mm from the wafer. The line-of-sight of the radiometer is 30° off the wafernormal.

Transcribed Image Text:

-Objective, 25 mm dia. Window -Radiometer Black panel or wafer -Chamber, Ta = 400 K