Transistor gain in an integrated circuit device between emitter and collector (hFE) is related to two variables [Myers and Montgomery (2002)] that can be controlled at the deposition process, emitter drive in time (SBI, in minutes), and emitter dose (x2, in ions x 1014). Fourteen samples were observed following deposition, and the resulting data shown in the table below. We will consider linear regression models using gain as the response and emitter drive-in time or emitter dose as the regressor variables.(a) Determine if emitter drive-in time influences gain in a linear relationship. That is, test Ho: 3? = 0, where ? i, is the slope of the regressor variable.(b) Do a lack-of-fit test to determine if the linear relationship is adequate. Draw conclusions.(c) Determine if emitter dose influences gain in a linear relationship. Which regressor variable is the better predictor of gain?

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y, (gain Obs. time, min) ions x1014) or hFE) 1004 Ei, (drive-in a2, (dose, 195 4.00 2 255 1636 852 1506 1272 4.00 195 255 255 255 255 195 255 255 4.60 4.60 4.20 1270 4.10 4.60 1269 903 4.30 4.30 1555 10 11 4.00 1260 255 4.70 114C 1276 12 255 255 340 4.30 13 4.72 1225 14 1321 4.30