A silicon sample is doped with atoms having donor states 0.110 eV below the bottom of the

Question:

A silicon sample is doped with atoms having donor states 0.110 eV below the bottom of the conduction band. (The energy gap in silicon is 1.11 eV.) If each of these donor states is occupied with a probability of 5.00 x 10-5 at T = 300 K,
(a) Is the Fermi level above or below the top of the silicon valence band and
(b) How far above or below?
(c) What then is the probability that a state at the bottom of the silicon conduction band is occupied?