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Electronic Devices and Circuit Theory 10th edition Robert L. Boylestad, Louis Nashelsky - Solutions

At what temperature will the 10-V Zener diode of Fig. 1.47 have a nominal voltage of 10.75V?
Consult your reference library and list three materials that have a negative temperature coefficient and three that have a positive temperature coefficient.
Determine the temperature coefficient of a 5-V Zener diode (rated 25°C value) if the nominal voltage drops to 4.8 V at a temperature of 100°C.
Using the curves of Fig. 1.48a, what level of temperature coefficient would you expect for a 20-V diode? Repeat for a 5-V diode. Assume a linear scale between nominal voltage levels and a current level of 0.1 mA.
Determine the dynamic impedance for the 24-V diode at Iz = 10 mA for Fig. 1.48b.
Compare the levels of dynamic impedance for the 24-V diode of Fig. 1.48b at current levels of 0.2, 1, and 10 mA. How do the results relate to the shape of the characteristics in this region?
Referring to Fig. 1.53e, what would appear to be an appropriate value of VK for this device? How does it compare to the value of VK for silicon and germanium?
a. What is the percentage increase in relative efficiency of the device of Fig. 1.53 if the peak current is increased from 5 mA to 10 mA? b. Repeat part (a) for 30 mA to 35 mA (the same increase in current). c. Compare the percentage increase from parts (a) and (b). At what point on the curve would
a. If the luminous intensity at 0° angular displacement is 3.0 mcd for the device of Fig. 1.53, at what angle will it be 0.75 mcd? b. At what angle does the loss of luminous intensity drop below the 50% level?
Sketch the current derating curve for the average forward current of the high-efficiency red LED of Fig. 1.53 as determined by temperature.
Describe the difference between n-type and p-type semiconductor materials.
Describe the difference between majority and minority carriers.
a. Using the characteristics of Fig. 2.147b, determine ID, VD, and VR for the circuit of Fig. 2.147a. b. Repeat part (a) using the approximate model for the diode, and compare results. c. Repeat part (a) using the ideal model for the diode, and compare results.
Determine Vo and ID for the networks for Fig. 2.155.
Determine Vo and I for the networks of Fig. 2.156.
Determine Vo1, Vo2, and I for the network of Fig. 2.157.
Determine Vo and ID for the network of Fig. 2.158.
Determine Vo for the negative logic OR gate of Fig. 2.159.
Determine Vo for the negative logic AND gate of Fig. 2.160.
a. Using the characteristics of Fig. 2.147b, determine ID and Vn for the circuit of Fig. 2.148.In Figure 2.148b. Repeat part (a) with R = 0.47 k(l. c. Repeat part (a) with R = 0.18 kO. d. Is the level of VD relatively close to 0.7 V in each case? How do the resulting levels of In compare? Comment
Determine the level of Vo for the gate of Fig. 2.161.
Determine Vo for the configuration of Fig. 2.162.
Assuming an ideal diode, sketch vi vd,h and id for the half-wave rectifier of Fig. 2.163. The input is a sinusoidal waveform with a frequency of 60 Hz.
Repeat Problem 22 with a silicon diode (VR = 0.7 V).In Problem 22Assuming an ideal diode, sketch vi vd,h and id for the half-wave rectifier of Fig. 2.163. The input is a sinusoidal waveform with a frequency of 60 Hz.
Repeat Problem 22 with a 6.8-kÎ© load applied as shown in Fig. 2.164. Sketch vL, and iL.
For the network of Fig. 2.165, sketch vo and determine Vdc.
For the network of Fig. 2.166, sketch vo and iR.
a. Given Pmax = 14 mW for each diode at Fig. 2.167, determine the maximum current rating of each diode (using the approximate equivalent model).b. Determine/max for Vmax for Vimax = 160 V.c. Determine the current through each diode at Vimax(nm using the results of part (b).d. If only one diode were
A full-wave bridge rectifier with a 120-V rms sinusoidal input has a load resistor of 1 kΩ. a. If silicon diodes are employed, what is the dc voltage available at the load? b. Determine the required PIV rating of each diode. c. Find the maximum current through each diode during conduction. d. What
Determine vo and the required PIV rating of each diode for the configuration of Fig. 2.168.
Determine the value of R for the circuit of Fig. 2.148 that will result in a diode current of 10 mA if E = 7 V. Use the characteristics of Fig. 2.147b for the diode.In Figure 2.148
Sketch vo for the network of Fig. 2.169 and determine the dc voltage available.
Sketch vo for the network of Fig. 2.170 and determine the dc voltage available.
Determine vo for each network of Fig. 2.171 for the input shown.
Determine vo for each network of Fig. 2.172 for the input shown.
Determine vo for each network of Fig. 2.173 for the input shown.
Determine vo for each network of Fig. 2.174 for the input shown.
Sketch iR and vo for the network of Fig. 2.175 for the input shown.
Sketch vo for each network of Fig. 2.176 for the input shown.
Sketch vo for each network of Fig. 2.177 for the input shown. Would it be a good approximation to consider the diode to be ideal for both configurations? Why?
For the network of Fig. 2.178:a. Calculate 5Ï„. b. Compare 5 Ï„ to half the period of the applied signal. c. Sketch vo.
a. Using the approximate characteristics for the Si diode, determine VD, ID, and VR for the circuit of Fig. 2.149.In Figure 2.149b. Perform the same analysis as part (a) using the ideal model for the diode.
Design a clamper to perform the function indicated in Fig. 2.180.
a. Determine VL, IL, IZ, and IR for the network Fig. 2.181 if RL = 180 Î©.b. Repeat part (a) if RL = 470 H. c. Determine the value of RL, that will establish maximum power conditions for the Zener diode. d. Determine the minimum value of RL, to ensure that the Zener diode is in the "on"
a. Design the network of Fig. 2.182 to maintain VL at 12V for a load variation (IL) from 0 mA to 200 mA. That is, determine RS and VZ.b. Determine PZmax, for the Zener diode of part (a).
For the network of Fig. 2.183, determine the range of Vi, that will maintain VL at 8 V and not exceed the maximum power rating of the Zener diode.
Design a voltage regulator that will maintain an output voltage of 20 V across a 1-kΩ load with an input that will vary between 30 V and 50 V. That is, determine the proper value of RS and the maximum current lZM.
Sketch the output of the network of Fig. 2.140 if the input is a 50-V square wave. Repeat for a 5-V square wave.
Determine the voltage available from the voltage doubler of Fig. 2.118 if the secondary voltage of the transformer is 120 V (rms).
Determine the current /for each of the configurations of Fig. 2.150 using the approximate equivalent model for the diode.In Figure 2.150(a)(b) (c)
Determine Vo and ID for the networks of Fig. 2.151.In Figure 2.151
Determine the level of V0 for each network of Fig. 2.152.
Determine Vo and ID for the networks of Fig. 2.153.
Determine Vo1 and Vo2 and the networks of Fig. 2.154.
Using the characteristics of Fig. 3.7, determine VBEat IE = 5 raA for VCB = 1, 10, and 20 V. Is it reasonable to assume on an approximate basis that VCB has only a slight effect on the relationship between VBE and IE?
a. Determine the average ac resistance for the characteristics of Fig. 3.10b. b. For networks in which the magnitude of the resistive elements is typically in kilohms, is the approximation of Fig. 3.10c a valid one [based on the results of part (a)]?
a. Using the characteristics of Fig. 3.8, determine the resulting collector current if/,. = 4.5 mA and VCB = 4 V. b. Repeat part (a) for IE = 4.5 mA and VCB = 16 V. c. How have the changes in VCB affected the resulting level of Ic? d. On an approximate basis, how are IE and lC related based on the
a. Using the characteristics of Figs. 3.7 and 3.8, determine IC if VCB = 10 V and VBE = 800 m V. b. Determine VBE if Ic = 5 mA and VCB = 10 V. c. Repeat part (b) using the characteristics of Fig. 3.10b. d. Repeat part (b) using the characteristics of Fig. 3.10c.
a. Given an αdc of 0.998, determine IC if IE = 4 mA. b. Determine αdc if IE = 2.8 mA and IB = 20 μA. c. Find IE if IB = 40 μA and αdc is 0.98.
Calculate the voltage gain (Av = VL/Vi) for the network of Fig. 3.12 if V = 500 mV and R = 1 kΩ. (The other circuit values remain the same.)
Calculate the voltage gain (A" = VL/V,) for the network of Fig. 3.12 if the source has an internal resistance of 100 (I in series with V,.
Using the characteristics of Fig. 3.14: a. Find the value of IC corresponding to VBE = +750 mV and VCE = +5 V. b. Find the value of VCE and VBE corresponding to IC = 3 mA and IB = 30 μA.
a. For the common-emitter characteristics of Fig. 3.14, find the dc beta at an operating point of VCE = +8 V and lc = 2 mA. b. Find the value of a corresponding to this operating point. c. At VCE = +8 V, find the corresponding value of ICEO. d. Calculate the approximate value of ICBO using the dc
a. Using the characteristics of Fig. 3.14a, determine ICEO at VCE = 10 V. b. Determine Bdc at IB = 10 μA and VCE = 10 V. c. Using the Bdc determined in part (b), calculate ICBO.
a. Using the characteristics of Fig. 3.14a, determine Bdc at IB = 80 μA and VCE = 5 V. b. Repeat part (a) at IB = 5 pA and V0 = 15 V. c. Repeat part (a) at IB = 30 pA and VCE = 10 V. d. Reviewing the results of parts (a) through (c), does the value of βdc change from point to point on the
a. Using the characteristics of Fig. 3.14a, determine βac at IB = 80 it μA and VCE = 5 V. b. Repeat part (a) at IB = 5 μA and VCE = 15 V. c. Repeat part (a) at IB = 30 μA and VCE = 10 V. d. Reviewing the results of parts (a) through (c), does the value of βac change from point to point on the
Using the characteristics of Fig. 3.14a, determine βdc at lB = 25 μA and VCE = 10 V. Then calculate αdc and the resulting level of IE. (Use the level of IC determined by IC = βdcIB.)
a. Given that αdc = 0.987, determine the corresponding value of βdc. b. Given βdc = 120, determine the corresponding value of α. c. Given that βdc = 180 and IC = 2.0 mA, find IE and IB.
An input voltage of 2 V rms (measured from base to ground) is applied to the circuit of Fig. 3.21. Assuming that the emitter voltage follows the base voltage exactly and that Vbe (rms) = 0.1 V, calculate the circuit voltage amplification (Av = Vo/Vi) and emitter current for RE = 1 kΩ.
For a transistor having the characteristics of Fig. 3.14, sketch the input and output characteristics of the common-collector configuration.
Determine the region of operation for a transistor having the characteristics of Fig. 3.14 if ICmax = 7 mA, VCEmax = 17 V, and PCmax = 40 mW.
Determine the region of operation for a transistor having the characteristics of Fig. 3.8 if ICmax = 6 mA, VCBmax =15 V, and PCmax = 30 mW.
Referring to Fig. 3.23, determine the temperature range for the device in degrees Fahrenheit.
Using the information provided in Fig. 3.23 regarding PDmax ,VCEmax ,ICmax and VCEsat , sketch the
Based on the data of Fig. 3.23, what is the expected value of ICEO using the average value of βdc?
How does the range of hFE (Fig. 3.23j, normalized from hFE = 100) compare with the range of hfe (Fig. 3.23f) for the range of IC from 0.1 to 10 mA?
Using the characteristics of Fig. 3.23b, determine whether the input capacitance in the common-base configuration increases or decreases with increasing levels of reverse-bias potential. Can you explain why?
Using the characteristics of Fig. 3.23f, determine how much the level of hfe has changed from its value at 1 mA to its value at 10 mA. The vertical scale is a log scale that may require reference to Section 11.2. Is the change one that should be considered in a design situation?
a. Using the characteristics of Fig. 3.24, determine βac at IC = 14 mA and VCE = 3 V. b. Determine βdc at Ic = IC mA and VCE = 8 V. c. Determine βac at IC = 14 mA and VCE = 3 V. d. Determine βdc at lC = 1 mA and VCE = 8 V. e. How does the level of βac and βdc compare in each region? f. Is the
If the emitter current of a transistor is 8 mA and IB is 1/100 of IC, determine the levels of lC and IB.
For the fixed-bias configuration of Fig 4 108, determine:(a) IBQ. (b) ICQ. (c) VCEQ. (d) VC. (e) VB. (f) VE.
Using the characteristics of Fig. 4.111, determine the following for an emitter-bias configuration if a In Figure 4.111(a) RC if VCC = 24 V and RE = 1.2 ktt. (b) Î² at the operating point, (c) RB. (d) Power dissipated by the transistor. (e) Power dissipated by the resistor RC.
a. Determine IC and VCE for the network of Fig. 4.108.In Figure 4.108b. Change Î² to 135 and determine the new value of IC and VCE for the network of Fig. 4.108. c. Determine the magnitude of the percentage change in lC and VCE using the following equations: d. Determine IC and VCE for
For the voltage-divider bias configuration of Fig. 4.115, determine:In Figure 4.115(a) IC. (b) VE. (c) VCC. (d) VCE. (e) VB. (f) R1.
Given the information provided in Fig. 4.116, determine:In Figure 4.116(a) IC. (b) VE. (c) VB. (d) R1.
Given the information appearing in Fig. 4.117, determine:In Figure 4.117(a) IC. (b) VE. (c) VEE. (d) VCE. (e) VB. (f) R1.
Determine the saturation current (ICsat) for the network of Fig. 4.115.In Figure 4.115
Determine the following for the voltage-divider configuration of Fig. 4.118 using the approximate approach if the condition established by Eq. (4.33) is satisfied.In Figure 4.118(a) IC. (b) VCE. (c) IB. (d) VE. (e) VB.
Repeat Problem 16 using the exact (Thevenin) approach and compare solutions. Based on the results, is the approximate approach a valid analysis technique if Eq. (4.33) is satisfied? In Problem 16 (a) IC. (b) VCE. (c) IB. (d) VE. (e) VB.
a. Determine ICQ, VCEQ, and 1BQ for the network of Problem 12 (Fig. 4.115) using the approximate approach even though the condition established by Eq. (4.33) is not satisfied.IN Figure 4.115b. Determine ICQ, VCEQand IBQ using the exact approach.
(a) Using the characteristics of Fig. 4.111, determine RC and RE for a voltage-divider network having a Q-point of ICQ = 5 mA and VCEQ = 8 V. Use VCC = 24 V and RC = 3RE.In Figure 4.111(b) Find VE. (c) Determine VB. (d) Find R2 if R1 = 24 kÎ© assuming that Î²RE > 10R2. (e)
Given the information appearing in Fig. 4.109, determine:a. lC. b. RC. c. RB. d. VCE.
a. Determine IC and VCE for the network of Fig. 4.115.In Figure 4.115b. Change Î² to 120 (50% increase), and determine the new values of lC and VCE for the network of Fig. 4.115. c. Determine the magnitude of the percentage change in IC and VCE using the following equations:
(I) Repeat parts (a) through (e) of Problem 20 for the network of Fig. 4.118. Change Î² to 180 in part (b).In Problem 4.118a. Determine IC and VCE for the network of Fig. 4.115. In Figure 4.115 b. Change Î² to 120 (50% increase), and determine the new values of lC and VCE for
For the collector-feedback configuration of Fig. 4.119, determine:(a) IB. (b) IC. (c) VC.
For the voltage feedback network of Fig. 4.120, determine:a. IC. b. VC. c. VE. d. VCE.
a. Determine the levels of lc and VCE for the network of Fig. 4.121.b. Change Î² to 135 (50% increase), and calculate the new levels of IC and VCE. c. Determine the magnitude of the percentage change in IC and VCE using the following equations: d. Compare the results of part (c) with
Determine the range of possible values for VC for the network of Fig. 4.122 using the lMÎ© potentiometer.
Given VB = 4 V for the network of Fig. 4.123, determine:a. VE. b. lC. c. VC. d. VCE. e. lB. f. Î².
Determine the level of VE and IE for the network of Fig. 4.124.

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