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engineering
electrical engineering
Electronic Devices and Circuit Theory 10th edition Robert L. Boylestad, Louis Nashelsky - Solutions
For the network of Fig. 4.125, determine:a. IB. b. IC. c. VCE. d. VC.
For the network of Fig. 4.126, determine:(a) IE. (b) VC. (c) VCE.
Given the information appearing in Fig. 4.110, determine:a. lC. b. VCC. c. β. d. RB.
For the network of Fig. 4.127, determine:(a) IB. (b) IC. (c) VE. (d) VCE.
Given VC = 8 V for the network of Fig. 4.128, determine:(a) IB. (b) IC. (c) β. (d) VCE.
Determine RC and RB for a fixed-bias configuration if VCC = 12 V, β = 80, and ICQ = 2.5 with VCEQ = 6 V. Use standard values.
Design an emitter-stabilized network at ICQ = ½ ICsat and VCEQ = 1/2 VCC = Use VCC = 20 V, ICsat = 10 mA, β = 120, and RC = 4RE. Use standard values.
Design a voltage-divider bias network using a supply of 24 V. a transistor with a beta of 110, and an operating point of ICQ = 4 mA and VCEQ = 8 V. Choose VE = 1/8 VCC. Use standard values.
Using the characteristics of Fig. 4.133, design a voltage-divider configuration to have a saturation level of 10 mA and a Q-point one-half the distance between cutoff and saturation, the available supply is 28 V, and VE is to be one-fifth of VCC. The condition established by Eq. (4.33 should also
For the circuit of Fig. 4.132, calculate the current I.
Determine VC, VCE and IC for the network of Fig. 4.134.
For the circuit of Fig.4.141(a) Does VC increase or decrease if RB is increased? (b) Does IC increase or decrease if β is reduced? (c) What happens to the saturation current if β is increased? (d) Does the collector current increase or decrease if VCC is reduced? (e) What
Determine the VC and IB for the network of Fig. 4.135.
Given the BJT transistor characteristics of Fig. 4.111:In Figure 4.111a. Draw a load line on the characteristics determined by E = 21V and RC = 3 kΩ for a fixed-bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of RH to establish
Determine IE and VC for the network of Fig. 4.136.
Using the characteristics of Fig. 4.111, determine the appearance of the output waveform for the network of Fig. 4.137. Include the effects of VCEsat, and determine IB, lB , and ICsat when Vi, = 10 V. Determine the collector-to-emitter resistance at saturation and cutoff.In Figure 4.111In Figure
Determine the following for the network of Fig. 4.108:a. S(ICO). b. S(VBE). c. S(β), using T1, as the temperature at which the parameter values are specified and β (T2) as 25% more than β (T1). d. Determine the net change in IC if a change in operating conditions
For the network of Fig. 4.112, determine:a. S(lCO). b. S(VBE). c. S(β), using T1 as the temperature at which the parameter values are specified and β (T2) as 25% more than β (T1). d. Determine the net change in 7C if a change in operating conditions results in
For the network of Fig. 4.115, determine:a. S(lCO). b. S(VBE). c. S(β), using 7, as the temperature at which the parameter values are specified and β (T2) as 25% more than β (T1). d. Determine the net change in IC if a change in operating conditions results in
For the network of Fig. 4.128, determine:a. S(ICO). b. S(VBE). c. S(β), using T1, as the temperature at which the parameter values are specified and β (T2) as 25% more than β (T1). d. Determine the net change in IC if a change in operating conditions results in
Compare the relative values of stability for Problems 52 through 55. The results for Exercises 52 and 54 can be found in Appendix E. Can any general conclusions be derived from the results?
a. Compare the levels of stability for the fixed-bias configuration of Problem 52.b. Compare the levels of stability for the voltage-divider configuration of Problem 54. c. Which factors of parts (a) and (b) seem to have the most influence on the stability of the system, or is there no general
Design the transistor inverter of Fig. 4.138 to operate with a saturation current of 8 mA using a transistor with a beta of 100. Use a level of IB equal to 120% of IBmax and standard resistor values.
a. Using the characteristics of Fig. 3.23c, determine ton and toff at a current of 2 mA. the use of log scales and the possible need to refer to Section 9.2. b. Repeat part (a) at a current of 10 mA. How have ton and toff changed with increase in collector current? c. For parts (a) and (b), sketch
For the emitter-stabilized bias circuit of Fig. 4.112, determine:(a) IBQ. (b) ICQ. (c) VCEQ. (d) VC. (e) VB. (f) VE.
For the circuit of Fig.4.141(a) Does VC increase or decrease if RB is increased? (b) Does IC increase or decrease if β is reduced? (c) What happens to the saturation current if β is increased? (d) Does the collector current increase or decrease if VCC is reduced? (e) What
Given the information provided in Fig. 4.113, determine:(a) RC. (b) RE. (c) RB. (d) VCE. (e) VB.
Given the information provided in Fig. 4.114, determine:In Figure 4.114(a) β. (b) VCC. (c) RB.
Determine the saturation current (ICsat) f°r tne network of Fig. 4.112.In Figure 4.112
a. What is the expected amplification of a BJT transistor amplifier if the dc supply is set a zero volts? b. What will happen to the output ac signal if the dc level is insufficient? Sketch the effect on the waveform. c. What is the conversion efficiency of an amplifier in which the effective value
For the network of Fig. 5.151, determine Vcc for a voltage gain of Av = -200.
For the network of Fig. 5.152:a. Calculate IB, IC, and reb. Determine Zi and Zoc. Calculate Av.d. Determine the effect of ro = 30 Ω on Av,
For the network of Fig. 5.153:a. Determine re.b. Calculate Zi and Zo.c. Find Avd. Repeat parts (b) and (c) with r0 = 25 Ω.
Determine Vcc for the network of Fig. 5.154 if Av = -160 and ro = 100 kO.
For the network of Fig. 5.155:a. Determine re.b. Calculate VB and VC.c. Determine Zi and Av = V0/Vi.
For the network of Fig. 5.156:a. Determine re.b. Find Zi and Z0.c. Calculate Av.d. Repeat parts (b) and (c) with r0 = 20 Ω.
For the network of Fig. 5.157, determine RE and RB if Av = -10 and re = 3.8 Ω. Assume that Zb = βRE.
Repeat Problem 15 with RK bypassed. Compare results.In Problem 15For the network of Fig. 5.156:a. Determine re.b. Find Zi and Z0.c. Calculate Av.d. Repeat parts (b) and (c) with r0 = 20 Ω.
For the network of Fig. 5.158:a. Determine re.b. Find Zi, and Av
For the network of Fig. 5.159:a. Determine re. and βre.b. Find Zi and Z0.c. Calculate Av.
For the network of Fig. 5.160:a. Determine Zi and Zo.b. Find Av.c. Calculate Vo if Vi = 1 mV.
For the network of Fig. 5.161:a. Calculate IB and IC.b. Determine re.c. Determine Zi, and Zo.d. Find Av.
For the common-base configuration of Fig. 5.162:a. Determine re.b. Find Zi and Zo.c. Calculate Av.
For the network of Fig. 5.163, determine Av.
For the collector feedback configuration of Fig. 5.164:a. Determine re.b. Find Zi, and Zo.c. Calculate Av.
Given r, = 10 Ω, β = 200, Av = -160, and Ai, = 19 for the network of Fig. 5.165, determine RC, Rr and VCC.
For the network of Fig. 5.50: a. Derive the approximate equation for Av. b. Derive the approximate equations for Zi, and Zo. c. Given RC = 2.2 kΩ, RF, = 120 kΩ, RE = 1.2 kΩ, β = 90, and VCC = 10 V, calculate the magnitudes of Av, Z" and Z" using the equations of parts (a) and (b).
What is the reactance of a 10-/H.F capacitor at a frequency of 1 kHz? For networks in which the resistor levels are typically in the kil-ohm range, is it a good assumption to use the short-circuit equivalence for the conditions just described? How about at 100 kHz?
Determine the current gain for the CE emitter-bias network of Fig. 5.156.
For the fixed-bias configuration of Fig. 5.167: a. Determine Av.NL, Zi and Z0. b. Sketch the two-port model of Fig. 5.63 with the parameters determined in part (a) in place. c. Calculate the gain AvL d. Determine the current gain AiL.
a. Determine the voltage gain AVL for the network of Fig. 5.167 for RL = 4.7, 2.2, and 0.5 kΩ. What is the effect of decreasing levels of RL on the voltage gain?b. How will Zi, Zo and AVNL change with decreasing values of RL?
For the network of Fig. 5.168:a. Determine AVNL, Zi and Zo.b. Sketch the two-port model of Fig. 5.63 with the parameters determined in part (a) in place.c. Determine AV.d. Determine AVs.e. Determine Avs using the re model and compare the results to that obtained in part (d).f. Change Rs to 1
For the network of Fig. 5.169:a. Determine AVL, Zi, and Zo.b. Sketch the two-port model of Fig. 5.63 with the parameters determined in part (a) in place.c. Determine AVL and AVi.d. Calculate AiL.e. Change RL to 5.6 kΩ and calculate Avs. What is the effect of increasing levels of RL on
For the voltage-divider configuration of Fig. 5.170: a. Determine AVNL, Zi, and Zo. b. Sketch the two-port model of Fig. 5.63 with the parameters determined in part (a) in place. c. Calculate the gain Av d. Determine the current gain AiL
a. Determine the voltage gain AVL, for the network of Fig. 5.170 with RL = 4.7, 2.2, and 0.5 kΩ. What is the effect of decreasing levels of RL on the voltage gain?b. How will Zi Zo, and AVNL change with decreasing levels of RL?
For the emitter-stabilized network of Fig. 5.171:a. Determine AvNL Zi and Zo.b. Sketch the two-port model of Fig. 5.63 with the values determined in part (a).c. Determine AVL and AVs.d. Change RS to 1 kΩ. What is the effect on AVNL, Zi and Z0?e. Change RS to 1 kΩ and determine AVL and AVs.
. For the network of Fig. 5.172:a. Determine AVNL Zi, and Zo.b. Sketch the two-port model of Fig. 5.63 with the values determined in part (a).c. Determine AVL and AVs.d. Change RS to 1 kΩ and determine AVL and AVs what is the effect of increasing levels of RS on the voltage gains?e.
For the common-base network of Fig. 5.173:a. Determine Zi Zo" and AvNL.b. Sketch the two-port model of Fig. 5.63 with the parameters of part (a) in place.c. Determine AVL and AVs.d. Determine AVL and AVs using the re model and compare with the results of part (c).e. Change RS to 0.5 kΩ
For the cascaded system of Fig. 5.174 with two identical stages, determine:a. The loaded voltage gain of each stage.b. The total gain of the system, Av and Avs.c. The loaded current gain of each stage.d. The total current gain of the system.e. How Zi, is affected by the second stage and RL.f. How
For the cascaded system of Fig. 5.175, determine:a. The loaded voltage gain of each stage.b. The total gain of the system, AVL, and AVi.c. The loaded current gain of each stage.d. The total current gain of the system.e. How Zi, is affected by the second stage and RL.f. How Zo is affected by the
For the BJT cascade amplifier of Fig. 5.176, calculate the dc bias voltages and collector current for each stage.
Calculate the voltage gain of each stage and the overall ac voltage gain for the BJT cascade amplifier circuit of Fig. 5.176.
In the cascode amplifier circuit of Fig. 5.177, calculate the dc bias voltages VB1, VB2, and VC2,
For the common-base configuration of Fig. 5.18, an ac signal of 10 mV is applied, resulting in an ac emitter current of 0.5 mA. If α = 0.980, determine:a. Zib. Vo if RL = 1.2 kΩ.c. Av = Vo/Vi.d. Zo with ro = ft.e. Ai = Io/Ii.f. Ib.
For the cascode amplifier circuit of Fig. 5.177, calculate the voltage gain Av and output voltage Vo-
Calculate the ac voltage across a 10-kil load connected at the output of the circuit in Fig. 5.177.
For the circuit of Fig. 5.178, calculate the dc bias voltage VE2, and emitter current IE2.
For the circuit of Fig. 5.178, calculate the amplifier voltage gain.
Repeat Problem 53 if a resistor RC = 200 kΩ is added along with a bypass capacitor CE. The output is now off the collector of the transistors.
For the feedback pair circuit of Fig. 5.179, calculate the dc bias values of VB1, VC2, and IC
Calculate the output ac voltage for the circuit of Fig. 5.179.
For the common-base configuration of Fig. 5.18, the dc emitter current is 3.2 mA and α is 0.99. Determine the following if the applied voltage is 48 mV and the load is 2.2 Ω. a. re. b. Zi. c. Ic. d. V0. e. Av. f. Ib.
Given the typical values of hie = 1 kΩ, hre = 2 x 10-4 and Av = -160 for the input configuration of Fig. 5.182:a. Determine Vo in terms of Vib. Calculate Ib in terms of Vic. Calculate Ib if hre Vo is ignored.d. Determine the percentage difference in Ib using the following equation:e. Is
Given the typical values of RL = 2.2 kΩ and hoe = 20 μS, is it a good approximation to ignore the effects of 1/hoe on the total load impedance? What is the percentage difference in total loading on the transistor using the following equation?
Repeat Problem 62 using the average values of the parameters of Fig. 5.92 with Av = -180.In Problem 62Given the typical values of hie = 1 kΩ, hre = 2 x 10-4 and Av = -160 for the input configuration of Fig. 5.182:a. Determine Vo in terms of Vib. Calculate Ib in terms of Vic. Calculate
a. Given β = 120, re = 4.5 Ω, and r0 = 40 kΩ, sketch the approximate hybrid equivalent circuit. b. Given hie = 1 kΩ, hre = 2 x l0-4, hfe = 90, and hoe = 20μS, sketch the re model.
For the network of Problem 9: a. Determine re. b. Find hfe. and hie. c. Find Zi, and Zo using the hybrid parameters. d. Calculate Av and Ai, using the hybrid parameters. e. Determine Zi and Zo if h"e = 50μS. f. Determine Av and Ai if hoe = 50 μS.
For the network of Fig. 5.183a. Determine Zi and Zo.b. Calculate Av and Ai
For the common-base network of Fig. 5.184:a. Determine Zi, and Zo.b. Calculate Av and Ai.c. Determine α, β, re and ro.
Using the model of Fig. 5.16, determine the following for a common-emitter amplifier if β = 80, IE (dc) = 2 mA, and ro = 40 Ω. a. Zi b. Ib. c. Ai = Io/Ii = IL/Ib if RL = 1.2kΩ. d. Av if RL = 1.2 kΩ.
Repeat parts (a) and (b) of Problem 68 with hre = 2 x 10-4 and compare results.a. Determine Zi and Zo.b. Calculate Av and Ai
For the network of Fig. 5.185, determine:a. Zib. Avc. Ai = Io/Iid. Zo
For the common-base amplifier of Fig. 5.186, determine:a. Zib. Aic. Avd. Zo
a. Using Fig. 5.124, determine the magnitude of the percentage change in hfe, for an IC change from 0.2 mA to 1 mA using the equationb. Repeat part (a) for an lC change from 1 mA to 5 mA.
Repeat Problem 74 for hie. (Same changes in IC).a. Using Fig. 5.124, determine the magnitude of the percentage change in hfe, for an IC change from 0.2 mA to 1 mA using the equationb. Repeat part (a) for an lC change from 1 mA to 5 mA.
a. If hoe = 20μS at IC = 1 mA on Fig. 5.124, what is the approximate value of hoe at lC = 0.2 mA? b. Determine its resistive value at 0.2 mA and compare to a resistive load of 6.8 kΩ. Is it a good approximation to ignore the effects of 1 /hoe in this case?
a. If hoe = 20μS at IC = 1 mA of Fig. 5.124, what is the approximate value of h" at lC = 10 mA? b. Determine its resistive value at 10 mA and compare to a resistive load of 6.8 kΩ. Is it a good approximation to ignore the effects of l/hoe, in this case?
a. If hre = 2 x 10-4 at IC = 1 mA on Fig. 5.124, determine the approximate value of hre at 0.1 mA. b. For the value of hre determined in part (a), can hre be ignored as a good approximation if Av = 210?
a. Based on a review of the characteristics of Fig. 5.124, which parameter changed the least for the full range of collector current? b. Which parameter changed the most? c. What are the maximum and minimum values of 1/hoe? Is the approximation 1 /hoe||RL = RL more appropriate at high or low levels
The input impedance to a common-emitter transistor amplifier is 1.2 kΩ with β = 140, r0 = 50 Ω, and RL = 2.7 Ω. Determine: a. re. b. Ib if Vi = 30 mV. c. Ic. d. Ai = Io/Ii = IL / Ib e. Av = Vo/Vi.
a. Based on a review of the characteristics of Fig. 5.126, which parameter changed the most with increase in temperature? b. Which changed the least? c. What are the maximum and minimum values of hfe? Is the change in magnitude significant? Was it expected? d. How does re vary with increase in
Given the network of Fig. 5.187:a. Is the network properly biased?b. What problem in the network construction could cause VB to be 6.22 V and obtain the given waveform of Fig. 5.187?
For the network of Fig. 5.150: a. Determine Zi and Zo. b. Find Av. c. Repeat part (a) with ro = 20 Ω. d. Repeat part (b) with ro = 20Ω
Given IDDS = 12mA and Vp = -4 V, sketch the transfer characteristics for the JFET transistor.Sketch the drain characteristics for the device of part (a)
Given IDSS = 9 mA and VP = -3.5 V, determine ID when: a. VGS = 0V. b. VGS = -2V c. VGS = -3.5V d. VGS = -5V
Given IDSS = 16mA and Vp = -5 V, sketch the transfer characteristics using the data points of Table 6.1. Determine the value of ID at VGS = -3 V from the curve, and compare it to the value determined using Shockley's equation. Repeat the above for VGS = - 1 V.
A p-channel JFET has device parameters of IDSS = 7.5 mA and VP = 4 V. Sketch the transfer characteristics.
Given IDSS = 6 mA and VP = -4.5 V: a. Determine ID at VGS = -2 and -3.6 V. Determine VGS at ID = 3 and 5.5 mA.
Given a Q-point of IDQ = 3 mA and VGS = -3 V, determine IDSS if VP = -6 V.
Define the region of operation for the 2N5457 JFET of Fig. 6.22 using the range of IDSS and VP provided. That is, sketch the transfer curve defined by the maximum IDSS and VP and the transfer curve for the minimum IDSS and VP. Then, shade in the resulting area between the two curves.
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