Calculate the total parasitic junction capacitance associated with a 10-kΩ base-diffused resistor if the base sheet resistance is 100 Ω/D and the resistor width is 6 μm. Repeat for a resistor width of 12 μm. Assume the doping profiles are as shown in Fig. 2.17. Assume the club-heads are 26 μm × 26 μm, and that the junction depth is 3 μm. Account for sidewall effects.

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nt In Bo n* Impurity concentration, cm-3 (cross section A-A') 1021 Emitter 1020 diffusion (Np) 1019 (Np) Buried layer 1018 Substrate background concentration (NA) 1017 Base (NA) diffusion 1016 1015 3 57 2.5 9/ 10 Epitaxial layer background concentration 15 20 1014 1013 (Np) x Kum)