Calculate the threshold voltage of the pchannel transistors for the process given in Table 2.1. Table 2.1.

Calculate the threshold voltage of the p–channel transistors for the process given in Table 2.1.

Table 2.1.

 

First do the calculation for the unimplanted transistor, then for the case in which the device receives the channel implant specified. Note that this is a p-type implant, so that the effective surface concentration is the difference between the background substrate concentration and the effective concentration in the implant layer.

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Value Value n-Channel p-Channel Transistor Parameter Symbol Transistor Units 1 × 1016 1 × 105 Atoms/cm Substrate doping Gate oxide thickness NA, Np 400 400 ter Metal-silicon work function Channel mobility Minimum drawn channel length Source, drain junction depth Source, drain side diffusion Overlap capacitance per unit gate width Threshold adjust implant (box dist) -0.6 -0.1 Фи cm?/V-s 700 3 350 Larwn X j La 3 μη 0.6 0.6 μη 0.3 0.3 μη Cd 0.35 0.35 fF/um impurity type effective depth X; 0.3 0.3 2 x 1016 Atoms/cm3 effective surface 0.9 x 1016 concentration Nominal threshold voltage Polysilicon gate doping V, Napoly 0.7 -0.7 1020 Atoms/cm 1020 concentration Poly gate sheet resistance Source, drain-bulk junction capacitances (zero bias) Source, drain-bulk junction capacitance grading R, 20 20 fF/um? Cp 0.08 0.20 0.5 0.5 coefficient Source, drain periphery capacitance (zero bias) Source, drain periphery capacitance grading coefficient C jow0 0.5 1.5 fF/um 0.5 0.5 Source, drain junction built-in potential 0.65 0.65 Q ss Atoms/cm? 10" 10!! Surface-state density dX4 Channel-length modulation 0.2 0.1 um/V dVps parameter