Determine the input offset voltage of the source-coupled pair in Fig. 3.50 for which I_TAIL= 50 µA. The drawn device dimensions are W = 10 µm and L = 1 µm. Use the process parameters given in Table 2.4. Assume that the worst-case W/L mismatch is 2 percent and the device thresholds are identical. Also assume that X_d= 0, R_TAIL †’ ˆž and the load resistors are identical.

Fig. 3.50:

Table 2.4:

Transcribed Image Text:

+Vpp Rp Rp Vo2 Vo1 M2 M1 Vi2 Vi1 RTAIL ITAIL -Vss Value Value n-Channel p-Channel Parameter Symbol Transistor Transistor Units Substrate doping Gate oxide thickness 5 x 105 4 x 1016 NA, ND Atoms/cm lox 80 80 Metal-silicon work function Фия -0.6 -0.1 450 cm?/V-s Channel mobility Minimum drawn channel length Source, drain junction depth Source, drain side diffusion 150 Larwn 0.4 0.4 um X) L4 0.15 0.18 um 0.09 0.09 um Overlap capacitance per unit gate 0.35 0.35 fF/um width Threshold adjust implant (box dist) impurity type effective depth effective surface х, 0.16 4 x 1016 0.16 Nsi 3 x 1016 Atoms/cm concentration Nominal threshold voltage Polysilicon gate doping concentration V, Napoly 0.6 100 -0.8 100 Atoms/cm Poly gate sheet resistance Source, drain-bulk junction R, Cp 0.2 0.4 fF/um? capacitances (zero bias) Source, drain-bulk junction capacitance grading 0.5 0.4 coefficient Source, drain periphery capacitance (zero bias) Source, drain periphery Суио 1.2 2.4 fF/um 0.4 0.3 capacitance grading coefficient Source, drain junction built-in potential 0.7 0.7 Os Surface-state density 101 10" Atoms/cm ах, Channel-length modulation parameter 0.02 0.04 um/V dV ps